| abstract |
One aspect of the present invention is a step of forming a resin film (3) on the surface of the path connecting the bonding pad (2a) on the surface of the semiconductor chip 2 and the electrode pad (1a) formed on the surface of the insulating base (1) And forming a wiring groove 4 having a depth equal to or greater than or equal to the thickness of the resin film 3 by laser processing along a path for connecting the bonding pad 2a and the electrode pad 1a. And depositing the plating catalyst 5 on the surface of the wiring groove 4, removing the resin film 3, and depositing the electroless plating film 6 only at the portion where the plating catalyst 5 remains. It is a mounting method of the semiconductor chip provided with the process of forming. Another aspect of the present invention is a three-dimensional structure provided with wiring on the surface, the wiring recess is formed on the surface of the three-dimensional structure extending over the mutually adjacent adjacent surfaces of the three-dimensional structure, the wiring conductor in the wiring recess At least a portion of the three-dimensional structure characterized in that the embedding. |