| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7843 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-54 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 |
| filingDate |
2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1257b9a75d0a7a0789a6fee9c3ea251a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcc6440c64f39085c3cdf5560c8ce980
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e15df2b0a448aa39959893100cfc6b79
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_abe8632e6f766ad5c371e6cbb70dbf74 |
| publicationDate |
2013-07-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20130085900-A |
| titleOfInvention |
Chlorine-Free Silicon Nitride Film Deposition Method |
| abstract |
A method of making a silicon nitride (SiN) material on a substrate is disclosed. Also included are improved SiN films made by this method. One aspect relates to depositing a chlorine free (Cl) conformal SiN film. In some embodiments, the SiN film is chlorine-free and carbon-free. Another aspect relates to a method of adjusting the stress and / or wet etch rate of a conformal SiN film. Another aspect relates to low temperature methods of depositing good quality conformal SiN films. In some embodiments, such methods include using trisilylamine (TSA) as the silicon-containing precursor. |
| priorityDate |
2012-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |