| abstract |
The polishing solution for copper polishing according to the present invention is a polishing solution for copper polishing comprising a first organic acid component which is at least one selected from an organic acid having a hydroxyl group, a salt of the organic acid and an acid anhydride of the organic acid, The polishing composition according to any one of claims 1 to 3, wherein the abrasive liquid for copper polishing comprises an inorganic acid component, an amino acid, a protective film forming agent, abrasive grains, an oxidizing agent, and water, wherein the inorganic acid component has an inorganic acid content of 0.15% Is 0.30 mass% or more, the content of the protective film forming agent is 0.10 mass% or more, and the ratio of the content of the first organic acid component in terms of organic acid to the content of the protective film forming agent is 1.5 or more. |