| abstract |
The present invention provides a process for forming insulating films 38, 40, 42 made of a silicon compound insulating material on a substrate 10, a process of forming openings 48 in the insulating films 38, 40, 42, Irradiating active energy rays in an atmosphere containing a hydrocarbon-based gas to form a barrier layer 50 made of crystalline SiC on the inner surface of the opening 48, and an opening 48 having the barrier layer 50 formed thereon. And forming a wiring structure 52 made of copper therein. |