| abstract |
The present invention can provide an apparatus and method for processing a substrate in real time using a switchable quasi-neutral beam system to improve the etch resistance of the photoresist layer. In addition, improved control of gate and / or spacer critical dimensions (CDs), control of gate and / or spacer CD uniformity, and removal of line edge roughness (LER) and line width roughness (LWR) Photoresist layers may be used in the etching procedure. |