http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120105373-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dc3e639586089fe232d0cfb27383c875 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
| filingDate | 2012-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a673169a21baa5bd4e19a5bcd932faf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_311887369e099646f6c3b9567a9d6da5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af193f3ae00c10b54eab872ac2bef7ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d6079d823376397337efd5ed9bafa0b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_243d3deffa23f7d94fe8fa5524e9364b |
| publicationDate | 2012-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20120105373-A |
| titleOfInvention | Method of forming barrier film and IC chip package |
| abstract | (Problem) A method for forming a barrier film having excellent insulation properties, barrier properties, and uniform film-forming properties in a hole at a low temperature using a vapor deposition polymerization method, and providing an IC chip package. (Solution means) A plurality of Si wafers on which IC chips are formed are superimposed and bonded together, and a TSV technique is used to drill a hole for electrically connecting the IC chips to the bonded Si wafer, and then, in this hole, a conductor Prior to forming the film, two or more kinds of monomers are evaporated in vacuo to form a barrier film made of polyimide in the pores by vapor deposition polymerization. Holes formed by TSV technology are formed after bonding to the Si wafer stack in which the Si wafers of the plurality of Si wafers in which the IC chips are formed are superimposed and bonded together. In the holes, vapor deposition polymerization is carried out using two or more kinds of monomers. A barrier film made of polyimide is formed, and a conductor film is formed on the barrier film. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160136287-A |
| priorityDate | 2011-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 129.