| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2012-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8b1298146c26a38135c6d00c480090f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b486a5e8528fe38fdd88f0946e210853
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50a8f58ed3604d6878d41dd7e56e6289
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c745cc5d8b5cba025d944e864981d9f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cf16caf9fe22a7b729596f74a327a2e |
| publicationDate |
2012-09-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120098448-A |
| titleOfInvention |
Method of manufacturing semiconductor device, substrate processing method, and substrate processing apparatus |
| abstract |
In the low temperature region, a silicon nitride film having a low chlorine concentration in the film and high resistance to hydrogen fluoride is formed. Supplying a monochlorosilane gas to the substrate in the processing chamber; supplying a hydrogen-containing gas plasma-excited to the substrate in the processing chamber; and supplying a nitrogen-containing gas plasma-excited or thermally excited to the substrate in the processing chamber. And performing a predetermined number of cycles including a step of supplying at least one of plasma-excited nitrogen gas and plasma-excited rare gas to the substrate in the processing chamber, and forming a silicon nitride film on the substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170034628-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20170124108-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9916974-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160035991-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150142591-A |
| priorityDate |
2011-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |