| abstract |
The semiconductor chip of the present invention includes a substrate having a front surface and a rear surface opposite thereto, a column portion penetrating from the front surface to the rear surface of the substrate, and having a conductive material embedded therein, and an upper surface of the column portion exposed to expose the upper surface of the column portion. A cavity from which the substrate is removed, a first insulating layer filling the cavity to expose the upper surface of the column, and a rear electrode electrically connected to the upper surface of the column. The semiconductor chip of the present invention and its manufacturing method can efficiently cut off leakage current even if the diameter of the through electrode is small, and it is not necessary to improve the equipment of expensive lithography equipment, etc. There is an advantage to avoid. |