| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02326
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76837
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2010-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5279bc0ae1450de664f316da3f097499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94879ef4d212a86d39c2a2c1e747f063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c70d854c2a35443df291cde10809b6fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36c0bb049be2b5f3146ba9beb908a8c |
| publicationDate |
2012-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120091235-A |
| titleOfInvention |
Stress Management for Tensile Membranes |
| abstract |
The formation of a gap filled silicon oxide layer with reduced likelihood of cracking is described. Deposition involves the formation of a flowable silicon containing layer that facilitates filling of the trenches. Subsequent processing at high substrate temperatures results in smaller cracks in the dielectric film than flowable films formed according to prior art methods. A compressible liner layer deposited prior to the formation of a gap filled silicon oxide layer is described, which reduces the likelihood that the deposited film will crack. The compressible capping layer deposited after the flowable silicon containing layer has also been found to reduce cracks. Compressible liner layers and compressible capping layers can be used independently or in combination to reduce or often eliminate cracks. Compressible capping layers in the disclosed embodiments have also been found to enable the underlying layer of silicon nitride to be converted to a silicon oxide layer. |
| priorityDate |
2009-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |