| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d3163957db744d0171ae3ff8ab14f0d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c44719cdc63816cb911cc4c176378fb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2ffc43db979ea806d0bbd21f155852ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eb9b1a2db956eac58a4284fe77e66ef9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a30bf7753aeed67c0acfb98b5886e358
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_145e48bcf473c6ed754cebda26f7bdbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b124ba9d45ea81d5651fc090e725cd01 |
| publicationDate |
2012-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120058840-A |
| titleOfInvention |
Quantum dot formation method |
| abstract |
The method of forming a quantum dot according to the present invention comprises the steps of (a) forming an insulating layer on a substrate, (b) forming a silicon film mixed with amorphous silicon and nanocrystals on the insulating layer, and (c) the amorphous from the silicon film. Etching the silicon. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10062799-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101670286-B1 |
| priorityDate |
2010-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |