| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ba961bfb5c5b958381ba73241ed2ddf |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0058
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035245
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-074 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0376
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352 |
| filingDate |
2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8698606a55ad2c94d08a9e4457413413
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c35f66cd7d5dd7f513ee4d583044063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f53797bcd78fd2831f9bcb99ee60081b |
| publicationDate |
2016-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-101670286-B1 |
| titleOfInvention |
Quantum-dot photoactive-layer and method for manufacture thereof |
| abstract |
The present invention provides a method of manufacturing a semiconductor device, comprising: forming an amorphous silicon compound layer and a silicon-rich compound layer containing silicon-containing impurities on a silicon substrate and containing a stoichiometric excess of silicon; And forming a plurality of silicon quantum dots in the medium, which is a silicon compound, by heat-treating the complex layered layer, wherein the amorphous silicon layer containing a conductive impurity is formed at least one time in place of the silicon excess compound layer, And a quantum dot photoactive layer prepared therefrom. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20220072351-A |
| priorityDate |
2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |