| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c16d2144a81bfa32a665dca1e93c3d37 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1207 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2010-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5492005ffe2ffd0d338a1efe7a7842c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bc827438bd3cfa6296c1537cbf07c01
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_215e90897cfae16d262af4d5e947624e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29837048dc1f52ea6c2819b34ad6e642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3270b8d0f0bc5a100fe4cdb62e930f9c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4340cf85ee69d6587d3657dce9163672
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d460dceadc9ba787b18af003223a3bbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_81d3f86b980fc15d2d08c75666b92e4f |
| publicationDate |
2012-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20120056956-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
In a semiconductor device manufacturing method, a plurality of horizontal channel transistors are formed in a first substrate. A first insulating film covering the horizontal channel transistors is formed on the first substrate. A second substrate is bonded to the first insulating film. A plurality of vertical channel transistors is formed on the second substrate. As the horizontal and vertical channel transistors are formed on different substrates, the horizontal channel transistors can be formed in sufficient space, and the vertical channel transistors can be formed with an optimized thickness. |
| priorityDate |
2010-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |