| abstract |
The semiconductor device has a semiconductor die having multiple bumps or interconnect structures formed on the die active surface. The bumps may have soluble and non-soluble portions such as conductive pillars and bumps formed thereon. Multiple conductive traces with interconnect sites are formed over the substrate. The bump is wider than the interconnect site. A masking layer is formed over the substrate area away from the interconnect site. The bumps are coupled to the interconnect site under pressure or reflow temperature so that the bumps cover the top and sides of the interconnect site. The encapsulant is electrodeposited around the bump between the die and the substrate. The masking layer forms a dam to block the encapsulant from extending beyond the semiconductor die. Protrusions may be formed on the interconnection sites or bumps. |