| abstract |
Disclosed are a polymer for forming a resist protective film, a composition for forming a resist protective film, and a pattern forming method of a semiconductor device using the same, for protecting a photoresist layer in a liquid immersion lithography process. The polymer for forming a resist protective film includes a repeating unit represented by Formula 1 below. [Formula 1] In Formula 1, R 1 is a hydrogen atom (H), a fluorine atom (F), a methyl group (-CH 3 ), a fluorinated alkyl group of 1 to 20 carbon atoms or a hydroxyalkyl group of 1 to 5 carbon atoms, R 2 is 1 carbon A chain or branched alkylene group or alkylidine group of 10 to 10, or a cyclic alkylene group or alkylidine group of 5 to 10 carbon atoms, and X is (Where n is an integer of 0 to 5, * represents a bonding site), and m is the number of X, which is 1 or 2. |