| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ed62b7551998e54b35784cdbbb2778d5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02129
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-345
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0217
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2011-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3cd060bc4a3d9ce9aba67e94c46a132b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_74ec1ece0494e7c80a71946adbce9583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c8694354d04397653739c4c69c621eac |
| publicationDate |
2011-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110129344-A |
| titleOfInvention |
Method of manufacturing semiconductor device and substrate processing apparatus |
| abstract |
The drawbacks of the conventional CVD method and the ALD method are improved, meeting the demand for thinning, and achieving a high film formation speed. Supplying a gas containing a first element that becomes a solid alone under conditions in which a CVD reaction occurs, and forming a first layer containing the first element on a substrate; and a agent that does not become a solid alone. The process of supplying a gas containing two elements and modifying the first layer to form a second layer containing the first element and the second element is one cycle. A thin film containing one element and a second element is formed. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160055777-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9431236-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10422035-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951919-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101469379-B1 |
| priorityDate |
2010-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |