http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101469379-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02175 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02211 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318 |
| filingDate | 2013-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-12-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101469379-B1 |
| titleOfInvention | Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium |
| abstract | The present invention provides a method of manufacturing a semiconductor device, a substrate processing apparatus, and a recording medium, which can suppress a decrease in film formation rate when forming a thin film containing a predetermined element, oxygen, carbon, and nitrogen in a low temperature region. A method of manufacturing a semiconductor device according to an embodiment of the present invention includes the steps of supplying a gas containing a predetermined element to a substrate, supplying a carbon-containing gas to the substrate, supplying an oxidizing gas to the substrate, A step of forming a thin film containing a predetermined element, oxygen, carbon and nitrogen on a substrate by performing a cycle including a step of supplying a nitride gas to the substrate a predetermined number of times; and in the step of forming a thin film, Containing gas is supplied before the step of supplying the nitriding gas is performed after the step of supplying the nitriding gas is performed and then the step of supplying the predetermined element-containing gas is performed, Containing gas and a step of supplying oxidizing gas are not performed. |
| priorityDate | 2012-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.