| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-764
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate |
2011-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_262c03e307997bbdbc733b10817b8b6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fde4bd95bcf54a64f0a70d59862c0888
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5afe31e72d6da33cd0d2b80354014c8a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8ccf414b8979ebb80c675f6c97d9a08b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d0705d96c3d0cf064ea1cfe1d0f0144e |
| publicationDate |
2011-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110119568-A |
| titleOfInvention |
Structures and Methods for Air Gap Integration |
| abstract |
Methods of creating an air gap-comprising metal-insulator wiring structure for VLSI and ULSI devices using a photo-patternable low k material and a formed air gap-containing wiring structure are disclosed. More specifically, the methods disclosed herein provide wiring structures constructed in a photo-patternable low k material wherein air gaps of different depths in the photo-patternable low k material Is defined by photolithography. In the methods of the present invention, no etching step is necessary to form the air gaps. Since no etching step is required in forming the air gaps in the photo-patternable low k material, the methods disclosed herein provide highly reliable wiring structures. |
| priorityDate |
2010-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |