| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_730848fc69ca7afca2b3c3e10b6cfd92 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24802 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02123
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3125
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-033
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40 |
| filingDate |
2009-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce7886d322f9b96d4cc03bc6b6b71623
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6d8d31fc33ff615b7dc99772de70626
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4cd98f094087b2421f9cf1d7d3d72914
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_810a7ed3f6db26ab3889c880271ea2f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d3857ba9f731d4c8753e1cde1349f30e |
| publicationDate |
2011-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20110118781-A |
| titleOfInvention |
Hardmask Process for Forming Reverse Tone Phase Using Polysilazane |
| abstract |
The present invention optionally comprises the steps of: a) forming a light absorbing organic underlayer on a substrate; b) forming a coating of photoresist on the underlying layer; c) forming a photoresist pattern; d) forming a polysilazane coating on the photoresist pattern from the polysilazane coating composition, wherein the polysilazane coating is thicker than the photoresist pattern, and further the polysilazane coating composition comprises a silicon / nitrogen polymer and an organic coating solvent Comprising; e) etching the polysilazane coating to remove the polysilazane coating at least below the height at which the top of the photoresist pattern is revealed; And f) dry etching to remove the photoresist and underlying layer under the photoresist, thereby forming an opening below where the photoresist pattern is present. will be. The invention also relates to a product of the method and a microelectronic device made using the method. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10345706-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20160048796-A |
| priorityDate |
2009-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |