| abstract |
The present invention relates to a hard mask compound and a hard mask composition comprising the same, and more particularly, in order to form a mask film having excellent etching resistance applicable to a fine pattern forming process of a semiconductor device, a crosslink including silicon and a hydrocarbon component The present invention relates to a hard mask compound including a compound having a linear structure that is easily bonded, and a hard mask composition including the hard mask compound, a crosslinking agent, a crosslinking density auxiliary resin, a catalyst, and an organic solvent. In the present invention, the hard mask composition is coated on the etched layer before the photoresist pattern is formed by spin coating, and then hardened, thereby providing excellent etching resistance and hardening of the etching selectivity of the photoresist pattern with respect to the etched layer. A mask film can be formed. |