| abstract |
The present invention provides an aluminum-diamond-based composite having high thermal conductivity and thermal expansion rate close to that of a semiconductor device, and further improving surface plating property and surface roughness to be suitable for use as a heat sink of a semiconductor device. A flat-shaped aluminum-diamond-based composite including diamond particles and a metal mainly composed of aluminum, wherein the aluminum-diamond-based composite includes a compounding unit and surface layers provided on both sides of the compounding unit, and the surface layer is mainly composed of aluminum. It is made of a material containing a metal to provide an aluminum-diamond-based composite, characterized in that the content of the diamond particles is 40% to 70% by volume of the entire aluminum-diamond-based composite. |