| abstract |
In the method of manufacturing a semiconductor device, a structure including a substrate, a flat plate-like semiconductor layer, and a columnar semiconductor layer is prepared, a second drain / source region is formed on the columnar semiconductor layer, a contact stopper film is formed, and an interlayer contact layer is provided. A film is formed and a contact layer is formed on the second drain / source region. Formation of the contact layer is performed by forming a contact layer pattern, etching the contact interlayer film to the contact stopper film using the contact layer pattern, thereby forming a contact hole for the contact layer, and remaining in the bottom of the contact layer contact hole. Including the removal of the stopper film by etching, the projection surface of the bottom of the contact hole bottom for the contact with the substrate is located in the outer periphery of the projection shape of the contact stopper film formed on the upper and side surfaces of the columnar semiconductor layer. |