| abstract |
A substrate processing method is provided for depositing a low dielectric constant adhesion layer between two low-k dielectric layers. In one aspect, the present invention provides a method of depositing a barrier layer comprising silicon and carbon on a substrate and having a dielectric constant of 4 or less, depositing a dielectric initiation layer adjacent to the barrier layer and silicon in proximity to the dielectric initiation layer. A method of treating a substrate comprising depositing a first dielectric layer comprising oxygen and carbon and having a dielectric constant of about 3 or less. |