http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100136933-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66765 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32458 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05H1-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2010-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_56dd48d8b7ca5a0071a5ddea6e7c53bc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_067e88d90945e3d0bc037f8c04d0c97d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a26e2e63e69b9bdc6bd0950516c05c1 |
| publicationDate | 2010-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100136933-A |
| titleOfInvention | Plasma processing apparatus, film formation method, and fabrication method of thin film transistor |
| abstract | An object of the present invention is to provide a plasma processing apparatus capable of forming a homogeneous and high quality film. The upper electrode of the plasma processing apparatus has a convex portion having a first introduction hole (first gas pipe) and a concave portion having a second introduction hole (second gas pipe), and the first introduction hole (first gas pipe) of the upper electrode A first introduction formed on the surface of the convex portion of the upper electrode, connected to a first cylinder filled with a gas that is difficult to dissociate, and connected to a second cylinder filled with a gas that is easy to dissociate; The gas which is hard to dissociate from the introduction port of a hole (1st gas pipe) is introduce | transduced into a reaction chamber, and the gas which is hard to dissociate from the introduction port of the 2nd introduction hole (2nd gas pipe) formed in the surface of a recessed part is introduce | transduced into a reaction chamber. Becomes |
| priorityDate | 2009-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 55.