http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100129684-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-935 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2010-05-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04341b65a6debcb7ebb3327b80897c0e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6011a794ec938830bfed30251e59fbd1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94b4102ee14afe44eff3b01a671358e |
| publicationDate | 2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100129684-A |
| titleOfInvention | Processing method and storage medium |
| abstract | When performing the damage recovery process of a low dielectric constant film, it is providing the processing method which can reduce the usage-amount of process gas, ensuring sufficient quantity of process gas which contributes to a recovery process. A processing container in which a pressure reduction state is applied to a damage layer formed on a low dielectric constant film by introducing a processing gas having a methyl group into a processing container containing a substrate having a low dielectric constant film having a damage layer formed on its surface. The dilution gas is introduced into the chamber to raise the pressure in the processing vessel to a first pressure which is lower than the processing pressure in the recovery process (step 3), after which the dilution gas is stopped and the processing gas is placed in the presence region of the substrate to be processed in the processing vessel. The pressure in the processing vessel is increased to the second pressure which is the processing pressure during the recovery process (step 4), the processing pressure is maintained, and the recovery process is performed on the substrate to be processed (step 5). |
| priorityDate | 2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.