http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20100088076-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-34 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2010-01-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b474044b3cb8db95f37b5d4fa48876cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d511f92bf26010fdcf91c063ebcb77ed http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da85656661b0f99b5dc1157f59c78046 |
| publicationDate | 2010-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20100088076-A |
| titleOfInvention | A thin film transistor, a method of manufacturing a polycrystalline oxide semiconductor thin film, and a method of manufacturing a thin film transistor |
| abstract | (Problem) The thin film transistor which consists of an oxide semiconductor containing at least 1 element of the group which consists of In, Ga, and Zn can have a high TFT characteristic, the manufacturing method of a polycrystalline oxide semiconductor thin film, and the manufacturing method of a thin film transistor To provide. (Measures) As a 1st process, it contains on the board | substrate 12 at least 1 element from the group which consists of In, Ga, and Zn using the vapor-phase film-forming method which targets the polycrystal sintered compact which has a composition of IGZO system. A thin film 10A made of an amorphous oxide semiconductor is formed. As a 2nd process, the thin film 10A which consists of an amorphous oxide semiconductor is thrown into an electric furnace, and it bakes in the temperature range 660 degreeC-840 degreeC which polycrystallizes, keeping the surface roughness Ra value at 1.5 nm or less. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9105668-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180118823-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10439028-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20190009818-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11069781-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8871565-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10586869-B2 |
| priorityDate | 2009-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.