| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c96a1f7733dd7752c52ee08b34854e90 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41766
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0619
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-30107
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4175 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66734
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66659
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H02M7-003
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7806 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H02M3-155 |
| filingDate |
2009-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c79699dc922f877ae257c41f28d42580 |
| publicationDate |
2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20100074043-A |
| titleOfInvention |
Single die output power stage using trench-gate low-side and ldmos high-side mosfets, structure and method |
| abstract |
PURPOSE: A single die output power stage and a manufacturing method thereof are provided to reduce power loss by integrating a Schottky diode with a lower power MOSFET. CONSTITUTION: An output stage is formed on a single semiconductor die. The output stage comprises an upper transistor, a lower transistor, and a single conductive structure. The upper transistor includes an LDMOS(Lateral Diffused MOS) device. The lower transistor includes a trench-gate VDMOS(Vertical Diffused MOS) device. The single conductive structure forms a gate unit(66A) of the upper transistor and a gate unit(66C) of the lower transistor. |
| priorityDate |
2008-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |