| abstract |
The invention includes increasing the inherent compressive stress in plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) and silicon carbon nitride (SiCN) thin films, including depositing a film from an amino vinylsilane based precursor. It is about a method. More specifically, the present invention relates to a chemical formula [RR 1 N] x SiR 3 y (R 2 ) z where x + y + z = 4, x = 1-3, y = 0-2 and z = 1-3 R, R 1 and R 3 may be hydrogen, C 1 to C 10 alkanes, alkenes, or C 4 to C 12 aromatics; each R 2 is a vinyl, allyl or vinyl containing functional group) Vinylsilane based precursors are used. |