http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20090130143-A

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c3a2f00e72ba6e4c09b6da573427fbed
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05009
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T156-10
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L25-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-486
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-48
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205
filingDate 2008-05-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ab389e3cf54ccdf66ddac01ede1a707e
publicationDate 2009-12-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20090130143-A
titleOfInvention A method of forming conductive vias through a substrate, and structures and assemblies resulting therefrom
abstract Methods of forming conductive elements on and within a substrate include forming a layer of conductive material on a surface of the substrate prior to forming a plurality of vias through the substrate from an opposite surface of the substrate to a layer of conductive material. And in some embodiments, a temporary carrier may be secured on its side opposite the substrate to the layer of conductive material prior to forming the vias. Structures comprising workpieces formed using such methods are also disclosed.n n n n Semiconductor Wafers, Substrates, Vias, and Workpieces
priorityDate 2007-05-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID423589861
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419557764
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID448710404
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID158003942
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID425270609
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID57466213
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID69667
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID31170

Total number of triples: 34.