| abstract |
In a method of forming a contact structure having improved thermal stability and electrical properties, after forming an insulating layer on an object having a contact region, the insulating layer is etched to form an opening that exposes the contact region. A material film including silicon and oxygen is formed on the exposed contact region, and then a metal film is formed on the material film including silicon and oxygen. A metal oxide silicide film is formed on at least a contact region by reacting a material film containing silicon and oxygen with a metal film, and then a conductive film filling an opening is formed on the metal oxide silicide film. Since the metal oxide silicide film in which the metal, silicon, and oxygen make up the Samsung system can be uniformly formed between the contact region and the contact, the aggregation phenomenon of the metal oxide silicide film can be effectively prevented, thereby ensuring excellent thermal and electrical stability. The interface resistance can be reduced. |