| abstract |
An interconnect structure is provided that includes a layer of dielectric material having at least one opening and a first barrier layer on the sidewall defining the opening. The ruthenium-containing second barrier layer overlies the first barrier layer, which has a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone. |