| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67184
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67161
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 |
| filingDate |
2008-11-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate |
2009-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090054902-A |
| titleOfInvention |
Manufacturing Method of Semiconductor Device |
| abstract |
An object of the present invention is to provide a method for producing a microcrystalline semiconductor film having good quality. In order to improve the quality of the microcrystalline semiconductor film formed at the beginning of the film formation, a microcrystalline semiconductor film near the interface of the underlying insulating film is formed under a low quality but good quality film formation condition, and then the microcrystalline semiconductor film is formed at a film formation rate continuously or stepwise increased thereafter. To be deposited. The microcrystalline semiconductor film is formed by a chemical vapor deposition method in a reaction chamber provided with a space inside the deposition chamber, introduces a sealing gas made of hydrogen or rare gas into the space, and introduces the inside of the reaction chamber into an ultra-high vacuum. This helps to lower the impurities in the microcrystalline semiconductor film near the interface of the base insulating film. Further, the microcrystalline semiconductor film is formed over the gate insulating film to manufacture a bottom gate TFT. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110126070-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10418491-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9214563-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9853167-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318617-B2 |
| priorityDate |
2007-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |