| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02219
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2008-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e5f2f0797063404d816dd2d463bdf3ec
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_72f1785ff9485892e1520d392e1d7d5c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47d4ea411543095c3f1598e6f36cd735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3fdc9bcf8ca5d844cf8494cbbf963d6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a3feb6c563d5ad330bf9c5532bcad9fc |
| publicationDate |
2009-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20090051186-A |
| titleOfInvention |
Patterning method |
| abstract |
The patterning method disclosed herein includes a step of forming a first film on a substrate, a step of forming a multilayer film including a resist film on the first film, and a pattern having a predetermined pattern by patterning the resist film by photolithography. Forming a resist film; and alternately supplying a first gas containing organic silicon and a second gas containing activated oxygen species to the substrate, wherein the first film and the first film are formed on the patterned resist film and the first film. Forming another silicon oxide film; etching the silicon oxide film so as to form sidewall spacers on the sidewalls of the patterned resist film; removing the patterned resist film; and processing the first film using the sidewall spacers as masks. Process. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101428845-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011153484-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011153484-A2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8343881-B2 |
| priorityDate |
2007-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |