| abstract |
Overall, the present invention provides a method for forming a dielectric barrier with reduced dielectric constant, improved etch resistance, and good barrier properties. One embodiment includes flowing a precursor comprising a silicon-carbon bond and a carbon-carbon bond to a process chamber, and generating a low-density plasma of the precursor in the process chamber to form a dielectric barrier film having carbon- Wherein some or all of the carbon-carbon bonds in the precursor are stored in a low-density plasma and incorporated into the dielectric barrier film. |