| abstract |
A method of manufacturing a gate dielectric of a field effect transistor is provided. In one embodiment, the method includes removing a native oxide layer, forming an oxide layer, forming a gate dielectric layer over the oxide layer, forming an oxide layer over the gate dielectric layer, layers and underlying thermal oxide / silicon. Annealing the interface. Optionally, the oxide layer may be nitrided prior to forming the gate dielectric layer. In one embodiment, the oxide layer on the substrate is formed by depositing an oxide layer, and the oxide layer on the gate dielectric layer is formed by oxidizing at least a portion of the gate dielectric layer using an oxygen-comprising plasma. In another embodiment, the oxide layer on the gate dielectric layer is formed by forming a thermal oxide layer, that is, depositing an oxide layer on the gate dielectric layer. |