http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080104299-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82a7d3f8d1a2d512c17fc0b26301b537 |
| publicationDate | 2008-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080104299-A |
| titleOfInvention | Methods and Systems for Selectively Etching Dielectric Materials to Silicon |
| abstract | A method and system are disclosed for selectively and uniformly etching a dielectric layer with respect to silicon and polysilicon in a dry plasma etching system. Etch chemistries include the use of fluorohydrocarbons such as CH 2 F 2 and CHF 3 . High etch selectivity and adequate uniformity are achieved by selecting process conditions, including the flow rate of CH 2 F 2 and the power coupled to the dry plasma etch system, to ensure a proper balance of active etch radicals and polymer forming radicals within the etch plasma. can do. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150142627-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9691630-B2 |
| priorityDate | 2006-02-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.