| abstract |
First, a semiconductor device is manufactured by providing a wafer designated as a saw street guide. The wafer is taped with dicing tape. The wafer is singulated into a plurality of die with a plurality of gaps between each of the plurality of dies along the saw street. The dicing tape is stretched to expand the multiple gaps to a predetermined distance. Organic materials are deposited into each of the multiple gaps. The organic material top surface is substantially the same plane as the first die top surface of the plurality of dies. Multiple via holes are formed in the organic material. Each of the plurality of via holes is each patterned at a number of bond pad locations on the plurality of dies. Conductive material is deposited in each of the plurality of via holes. |