| abstract |
The present invention relates to a field effect transistor and a ferroelectric memory device having a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure, and a method of manufacturing the same. The ferroelectric memory device or the field effect transistor according to the present invention comprises a substrate (1), a transistor formed on the substrate (1), and a ferroelectric capacitor formed on the transistor side, the ferroelectric capacitor is a lower electrode layer ( 42) and an upper electrode layer 44, and a ferroelectric layer 43 formed between the lower and upper electrode layers. |