| abstract |
The present invention provides a semiconductor device package comprising a substrate having at least a preformed die receiving cavity and terminal contact metal pads formed in the top surface. At least the first die is disposed in the die receiving cavity. The first dielectric layer is formed on the first die and the substrate and refilled with a gap between the first die and the substrate to absorb thermal mechanical stress therebetween. The first redistribution layer RDL is formed on the first dielectric layer and bonded to the first die. The second dielectric layer is formed on the first RDL, and then the second die is disposed on the second dielectric layer and surrounded by the core pastes formed therethrough. The second redistribution layer RDL is formed on the core pastes to fill the through holes, and then a third dielectric layer is formed on the second RDL. |