http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080043092-A

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publicationDate 2008-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber KR-20080043092-A
titleOfInvention Thin film transistor substrate and its manufacturing method
abstract BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor substrate on which a protective film is formed so as to maintain characteristics of an oxide semiconductor and a method of manufacturing the same.n n n According to the present invention, a thin film transistor including a zinc oxide oxide semiconductor and a pixel electrode connected to a gate line and a data line, a gate line and a data line are formed on the substrate to cross each other and define a pixel region. And an organic protective film formed between the thin film transistor and the pixel electrode and formed of any one of siloxane-based and benzocyclobutene.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101510212-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20110135681-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101449460-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180125043-A
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