http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101510212-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-136 |
| filingDate | 2008-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101510212-B1 |
| titleOfInvention | Method for manufacturing oxide semiconductor thin film transistor |
| abstract | A method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a channel material is disclosed. A manufacturing method of an oxide semiconductor thin film transistor to be disclosed includes forming a protective film on a channel layer and then performing a heat treatment process at a temperature of 100 캜 or more for 1 hour or more. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102086442-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180126558-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11605687-B2 |
| priorityDate | 2008-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.