| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6429a55c77af46ec47c6c9da1118f804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8f55aba8e5bca84d885b8cba5cc21f30 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02112
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-509
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-318
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-36 |
| filingDate |
2002-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d4708c8ea7f9ebf169e2f95a637de19
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d2e208327382e1babec82c83d70bb6f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59f2c3d4d492e4dd34db843c425008fa |
| publicationDate |
2008-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080041302-A |
| titleOfInvention |
Film forming method, film forming apparatus, insulating film and semiconductor integrated circuit |
| abstract |
Provided are a film forming method and a film forming apparatus capable of forming a boron carbon nitrogen film. Plasma 50 is generated in the cylindrical vessel 1, the nitrogen atoms are mainly excited in the cylindrical vessel 1, and then reacted with boron and carbon to form a boron carbon nitrogen film 61 on the substrate 60. . |
| priorityDate |
2001-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |