| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36d1d9c59848bff6ad5f55923d1290f5 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05644
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01079
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-01078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0558
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13144
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0401
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-04941 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45523
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45534
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2007-10-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_89a0c7c06d229c069a9c7aa7a95c96e9
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e2a3235b82a7da25a31a07022c73910e |
| publicationDate |
2008-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20080034775-A |
| titleOfInvention |
Manufacturing Method of Semiconductor Device |
| abstract |
[assignment]n n n The defect in the connection part in which the metal film was embedded through the barrier metal film of the laminated structure in which the titanium nitride film was formed on the titanium film inside the connection hole opened to the insulating film is avoided.n n n [Workaround]n n n After the connection to form a bottom TiCl 4 gas thermal reaction Ti film (21a) by thermal reaction with the hole 20 and forms a plasma reaction Ti film (2lb) by the plasma reaction with the TiCl 4 gas, H The plasma treatment using 2 gases and the plasma treatment using NH 3 gas are performed to form a nitrogen rich TiN film 21c on the surface of the plasma reaction Ti film 2lb. Subsequently, film formation by CVD using WF 6 gas and reduction using SiH 4 gas or B 2 H 6 gas are repeated a plurality of times, and a multi-layered tungsten nucleus film (2C) is formed on the nitrogen rich TiN film 21c. After the formation of 22a), a blanket tungsten film 22b is formed on the tungsten nuclear film 22a at a temperature of 400 degrees or less by CVD using WF 6 gas and H 2 gas. |
| priorityDate |
2006-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |