| abstract |
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing method and a semiconductor manufacturing apparatus, wherein oxygen, by irradiating microwaves through a planar antenna member RLSA 60 having a plurality of slits on a wafer W mainly composed of silicon in a processing gas environment, Or a plasma containing nitrogen or oxygen and nitrogen, and using the plasma to oxidize, nitrate, or oxynitride directly on the surface of the wafer W to obtain an insulating film having an equivalent film thickness of 1 nm or less. By forming the semiconductor layer), the film quality control at the interface between the silicon substrate and the SiN film can be successfully performed, and a technique for obtaining a semiconductor manufacturing method and apparatus capable of forming a high quality SiN film in a short time is proposed. . |