| abstract |
The method performed on a semiconductor chip comprising a doped semiconductor material adjacent to a substrate comprises generating a first via through at least a portion of the substrate extending from the outside of the substrate into the substrate toward the doped semiconductor material—the first via is a wall. Having a surface and a bottom; Introducing a first electrically conductive material into the first via to create an electrically conductive path between the outer side and the bottom of the substrate; Generating a second via extending from the outer surface of the doped portion of the semiconductor chip to the bottom and aligned with the first via; And introducing a second electrically conductive material into the second via to create an electrically conductive path extending from the outside of the substrate to the outer surface of the doped portion of the semiconductor chip. |