http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20080005190-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3342 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2006-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f616da54357ac928ea8774aee9711ea2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_628d6a1d9f5c57ef6cc7114dc472063c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6f1d890b9d2ab3727d4f42ef7731e82c |
| publicationDate | 2008-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20080005190-A |
| titleOfInvention | Ashing apparatus, ashing method and impurity doping apparatus |
| abstract | An object of the present invention is to detect an interface between a surface hardened layer of a resist and an internal non-cured layer, and an interface between a non-cured layer and a semiconductor substrate, and to provide a high throughput ashing device, an ashing method, and an impurity doping device group. To provide. An ashing apparatus of the present invention is a resist applied to a semiconductor substrate and used as a mask, wherein the ashing apparatus is plasma ashed of an impurity doped layer and a surface hardened layer and an internal non-cured layer formed on the resist, wherein the semiconductor is subjected to plasma ashing. And an ellipsometer for detecting an elliptically polarized light reflected by injecting linearly polarized light into the substrate and detecting an interface between the cured layer and the non-cured layer and an interface between the cured layer and the semiconductor substrate. |
| priorityDate | 2005-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.