| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_73aeddf6b80f70ea84bb645d4f4edf75 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45531
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-4554
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45542
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J19-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-507
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 |
| filingDate |
2000-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a56d3b61ddb517d7a336eceb0ffdaf4 |
| publicationDate |
2007-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070110451-A |
| titleOfInvention |
Continuous chemical vapor deposition |
| abstract |
The present invention provides for continuous chemical vapor deposition by lines 18 which introduce gas into the reaction chamber 2 or 3 through the reaction chamber 2 or 3, pump 38 and valves 20 and 22 operated at low pressure. to provide. The first reactants 28, 29 form a monolayer to be coated on the paat, while the second reactant passes through the radical generator 14, 16 or 44, and the radical generator unites the second reactant. Partially decomposes or activates into gaseous radicals before reaching the layer. The second reactant is not necessary for monolayer formation but is used to react with the monolayer. The excess second reactant and reaction product are discharged or removed in the reaction chamber 2 or 3 by completion of the process cycle. For example, the removal is performed by simply stopping the power of the radical generator and the flow of the second reactant into the chamber continues. This process cycle can be repeated until it has grown to the thickness of the desired film. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140008751-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130113783-A |
| priorityDate |
1999-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |