| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-321
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2007-04-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cd251c4297047fd9eba42873a4ebea13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c63c0bd756fa180af4547ab7d7d03dc7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f7cab781b277b5ae8c195ede3357ea4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9ff28cd49b37e02732e64b38f3dffe4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_87a433a35f3681d064a9d5a061413d3b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_58053f8520af4d9b92ea3b81cba22ad2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_28551555e86121fdbfd328bc37a63c85
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f5fac535bbe468d938feba1ba9c6ea9e |
| publicationDate |
2007-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
KR-20070106415-A |
| titleOfInvention |
Plasma etching process using a polymerized etching gas having different etching rates and polymer-deposition rates in different radial gas injection zones using time modulation |
| abstract |
The plasma etching process for etching the workpiece is carried out in a plasma reactor with a sealing electrode over the process region having a plurality of concentric gas injection zones. The process includes injecting process gas having chemical species of different composition through different gas injection zones among the gas injection zones to establish a distribution of chemical species between the plurality of gas injection zones. Process gases include fluorine-enriched polymerized etching gases that promote high etch rates, carbon-enriched polymerized etching gases that promote high polymer deposition rates, polymer management gases that reduce polymer deposition (e.g., oxygen or Nitrogen) and an inert diluent gas that reduces etch profile tapering. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10665431-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20120056782-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20150077400-A |
| priorityDate |
2006-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |