Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76811 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76835 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 |
filingDate |
2007-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e14b87ecb4ef502d6bc476b883329c6a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_59af761b636d05a2014cf95338e04e24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a2153f73d42f484de324a6dfbca75e57 |
publicationDate |
2007-09-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
KR-20070093920-A |
titleOfInvention |
Semiconductor device manufacturing method |
abstract |
In the present specification, a semiconductor including a first step of coating a substrate with a two-layer insulating film having a laminated structure having a skeleton structure of an inorganic material, and a second step of etching the upper layer of the insulating film until the lower layer of the insulating film is reached. A device manufacturing method is described. In such a semiconductor device manufacturing method, the first step is performed in such a manner that the skeleton structure contains a pore-forming material of a hydrocarbon compound such that one layer of the insulating film contains more carbon than the other layer of the insulating film. |
priorityDate |
2006-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |