http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070063440-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08K3-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0757 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D183-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate | 2006-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a727bc2adef7c088b52170c16eb5a93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4856861c3aa0e9c958f966e2283bfc54 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c35dc31e0f008513854fb397a72146b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b4f04400920727cf56f01b5702ae1a91 |
| publicationDate | 2007-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070063440-A |
| titleOfInvention | Anti-reflection film material, and pattern formation method and substrate using the same |
| abstract | According to the present invention, the etching selectivity is high with respect to the photoresist film, and by forming an inorganic dense film, the upper photoresist film can form a good pattern, a wet strip is possible, the storage stability is high, and it is excellent in the etching of the lower layer film. Provided are a novel anti-reflection film material that exhibits dry etching resistance and is suitable as a resist interlayer film of a multilayer resist film, a pattern formation method of forming an anti-reflection film on a substrate using the anti-reflection film material, and a substrate having the anti-reflection film as a resist interlayer film.n n n The antireflection film material of the present invention is an antireflection film material used as a resist interlayer film of a multilayer resist film used in lithography, and a polymer compound and an organic compound obtained by reacting a polymer compound having a repeating unit represented by the following general formula (1) with a chelating agent: It is characterized by containing a solvent and an acid generator.n n n <Formula 1> |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2010071255-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20140037889-A |
| priorityDate | 2005-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID468003439 |
Total number of triples: 24.