http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20070031829-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B61-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2004-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2007-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-20070031829-A |
| titleOfInvention | Dry etching method and method of manufacturing magnetic memory device |
| abstract | It is an object of the present invention to provide a process capable of satisfactorily etching PtMn, which is used in the fin layer of MRAM. The dry etching method which dry-etches the layer containing platinum and / or manganese using a pulsed plasma, The manufacturing method of MRAM which applied this dry etching method to the process of a fin layer. This MRAM has a configuration in which a memory section is formed of a magnetic memory element composed of a tunnel magnetoresistive element formed by stacking a magnetization pinned layer having a fixed magnetization direction, a tunnel barrier layer, and a magnetic layer capable of changing the magnetization direction. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20130043587-A |
| priorityDate | 2003-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.